Abstract
Extremely heavily doped polycrystalline silicon films were prepared by multiple-pulse XeCl excimer laser annealing of hydrogenated amorphous silicon films. The as-grown films used here included five types: intrinsic, boron-doped, phosphorous-doped, and carbon alloyed with and without boron doping. Raman studies reveal that the annealed films prepared from the boron or phosphorous doped a-Si:H have high carrier activation and display the interference lineshape (Breit-Wigner-Fano) of the discrete phonons (Si-Si and Si-B modes) interacting with the continuum of the single particle electronic Raman scattering. The Raman lineshapes indicate concentrations of ~1 × 1021 cm−3. This is confirmed by dark conductivities exceeding 100 S/cm in the annealed boron-doped and phosphorous-doped layers.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
P.H. Liang, C.J. Fang, D.S. Jiang, P. Wagner, and L. Ley, Appl. Phys. A 26, 39 (1981).
K. Winer, G.B. Anderson, S.E. Ready, B.Z. Bachrach, R.I. Johnson, R.A. Ponce, & J.B. Boyce, Appl. Phys. Lett, 57, 2222 (1990).
R. Kakkad, S.J. Fonash, and S. Weideman, Appl. Phys. Lett., 59, 3309 (1991).
K. Nakazawa & K. Tanaka, J. Appl. Phys. 68, 1029 (1990).
B. Goldstein, C.R. Dickson, I.H. Campbell, & P. M. Fauchet, Appl. Phys. Lett. 53, 2672 (1988).
C.W. White, S.R. Wilson, B.R. Appleton, and R.W. Young, Jr., J. Appl. Phys. 51, 738 (1980).
D.E. Aspnes, G.K. Celler, J.M. Poate, G.A. Rozgoyni, and T.T. Sheng, Proc. Symp. on Laser and Electron Beam Processing of Electronic Materials, ed by Anderson, Celler, Rozgonyi, (Electrochemical Society vol 80–1).
A. Compaan, G. Contreras, and M. Cardona, Mat. Res. Soc. Symp. Proc. 23, 117 (1984); G. Contreras, A.K. Sood, M. Cardona, and A. Compaan, Sol. State Commun. 49, 303 (1984).
F. Cerdiera, T.A. Fjeldly, and M. Cardona, Phys. Rev. B 8, 4734 (1973); F. Cerdiera, T.A. Fjeldly, and M. Cardona, Phys. Rev. B 9, 4344 (1974); R. Beserman and T. Bernstein, J. Appl. Phys. 48, 1548 (1977).
F. A. Trumbore, Bell Sys. Tech. Journal, January 1960, p. 204; J. Chikawa and F. Sato, Jpn. J. Appl. Phys. 19, L577 (1980).
Glasstech Solar Inc has been succeeded by Materials Research Group, Wheatridge, CO.
M.H. Brodsky, T.S. Title, K. Weiser, and G.D. Pettit, Phys. Rev. B 1, 2632 (1970); D.T. Pierce and W.E. Spicer, Phys. Rev. B 3, 3017 (1972).
G. Lubberts and B.C. Burkey, J. Appl. Phys. 55, 760 (1984).
D. E. Aspnes, A.A. Studna, and E. Kinsbron, Phys. Rev. B 29, 768 (1984).
G. Abstreiter, M. Cardona, and A. Pinczuk in Light Scattering in Solids IV (Springer-Verlag, Berlin, 1984, pp. 5–150.
M. Chandrasekhar, H.R. Chandrasekhar, M. Grimsditch, and M. Cardona, Phys. Rev. B 22, 4825 (1980).
Acknowledgements
Two of us (AA and DS) thank Prof. Compaan and the University of Toledo for arrangements while aspects of this work were being performed. The U. of Toledo work was supported in part by the Thomas Edison program of the State of Ohio and Glasstech, Inc.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Savage, M.E., Jayamaha, U., Compaan, A. et al. Raman Studies of Heavily Doped Polycrystalline Si Films Prepared by Excimer-Laser-Annealing of Doped a-Si:H. MRS Online Proceedings Library 283, 665–670 (1992). https://doi.org/10.1557/PROC-283-665
Published:
Issue Date:
DOI: https://doi.org/10.1557/PROC-283-665