Abstract
The morphology of small islands of TiSi2 and ZrSi2 on Si(100) is investigated and compared to larger islands in terms of a solid state capillarity model. The silicide islands are formed by deposition of very thin layers of titanium and zirconium (3-50 Å) followed by an anneal at high temperatures (700-1200 °C). SEM and cross-sectional HRTEM are used to study respectively the surface and interface morphology. It is found that the C49-phase for TiSi2 is stable for layers as thin as 8 Å, and annealing temperatures as high as 1200°C. An explanation for the fact that the formed islands align parallel to the Si<110> directions is given in terms of interplanar lattice spacings.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
R.J. Nemanich, Hyeontag Jeon, C.A. Sukow, J.W. Honeycutt and G.A. Rozgonyi, Mat. Res. Soc. Symp Proc, Vol. 260, (1992); J. Appl. Phys. 71, 4269 (1992).
C.A. Sukow and R.J. Nemanich, Mat. Res. Soc.Symp. Proc, Vol. 260, (1992).
C.A. Sukow, M.S. Thesis, North Carolina State University, 1992.
R.W. Fathauer, J.M. Iannelli, C.W. Nieh, Shin Hashimoto, Appl. Phys. Lett. 57, 1419 (1990).
H.C. Cheng and L.J. Chen, Appl. Phys. Lett. 46, 562 (1985).
A. Catana, P.E. Schmid, M. Heintze, F. Levy, P. Stadelmann and R. Bonnet, J. Appl. Phys., 67, 1820 (1990).
Acknowledgement
The authors would like to thank Y.L. Chen for providing us with the TEM-micrographs. This work is supported by NSF through Grant DMR-9204285.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Kropman, B.L., Sukow, C.A. & Nemanich, R.J. Surface and Interface Morphology of Small Islands of TiSi2 and ZrSi2 ON (001) Silicon. MRS Online Proceedings Library 280, 589–592 (1992). https://doi.org/10.1557/PROC-280-589
Published:
Issue Date:
DOI: https://doi.org/10.1557/PROC-280-589