Abstract
The solidification of Si-As alloys induced by pulsed laser melting was studied at regrowth velocities where the partition coefficient is close to unity. The congruent melting temperatures, TO, of Si-As alloys were determined using a temperature measurement technique developed for this work, and were confirmed with TOmeasurements using three other methods. The time-resolved temperature measurement uses a thin-film platinum thermistor, below and electrically isolated from the Si-As alloy layer, to directly measure the temperature during solidification. This, combined with measurements of transient conductance of the Si-As alloy, time-resolved reflectivity and Rutherford Backscattering Spectrometry, permitted the determination of the solid-liquid interface temperature, velocity and partition coefficient, the latent heat of fusion and TO for Si - 4.5 at. % As and Si - 9 at. % As alloys.
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Acknowledgement
The authors thank P.M. Smith and D.E. Hoglund from Harvard University for helpful discussions and for assistance with heat flow simulations. Samples were prepared at the National Nanofabrication Facility at Cornell. We acknowledge the staff at NNF for valuable technical support. This research was supported by NSF-DMR-92-08931. Two of us (D.P.B. and M.O.T.) were supported by NSF- DMR-89-3333.
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Kittl, J.A., Reitano, R., Aziz, M.J. et al. Congruent Melting Temperatures of Si-As Alloys Measured During Pulsed-Laser Melting and Rapid Solidification. MRS Online Proceedings Library 279, 691–698 (1992). https://doi.org/10.1557/PROC-279-691
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DOI: https://doi.org/10.1557/PROC-279-691