Abstract
It is generally observed that strain relaxation, which occurs by misfit dislocation formation, in lattice-mismatched heteroepitaxial layers is accompanied by the formation of threading dislocations. However, our group and others have observed that strain-relaxed epitaxial layers of In1-xGaxAs on GaAs substrates can be grown without the formation of threading dislocations in the epitaxial layer. We have been able to grow strain-relaxed layers up to 13% In concentration without observable densities of threading dislocations in the epilayer but do observe a large number of dislocations pushed into the GaAs substrate. The ability to grow strain-relaxed, lattice-mismatched heteroepitaxial layers has important practical applications. We have succeeded in growing dislocation-free layers of ZnSe on appropriately lattice-matched layers of In1-xGaxAs.
Similar content being viewed by others
References
K.H. Chang, P.K. Bhattacharya, and R. Gibala, J. Appl. Phys, 66, 2993 (1989).
L.J. Schowalter, A.P. Taylor, Q.-F. Xiao, J. Petruzzello, D. Cammack, and D. Olego, Poster Presentation, Spring MRS Meeting (1990).
V. Krishnamoorthy, P. Ribas, and R.M. Park, Appl. Phys. Lett.58, 2000 (1991).
J.W. Matthews and A.E. Blakeslee, J. Cryst. Growth, 27, 118 (1974).
E.A. Fitzgerald, D.G. Ast, P.D. Kirchner, G.D. Pettit, and J.M. Woodall, J. Appl. Phys, 63, 693 (1988).
B.A. Fox and W.A. Jesser, J. Appl. Phys, 68, 2801 (1990).
P.J. Orders and B.F. Ushers, Appl. Phys. Lett.50, 980 (1987).
P. Franzosi, G. Salviati, F. Genova, A. Stano, and F. Taiariol, Mat. Lett., 3, 425 (1985).
G.A. Rozgonyi, P.M. Petroff, and M.B. Panish, Appl. Phys. Lett.24, 251 (1974).
F.K. LeGoues, B.S. Meyerson, and J.M. Morar, Phys. Rev. Lett., 22, 2903 (1991).
J.W. Matthews, A.E. Blakeslee, and S. Mader, Thin Solid Films, 33, 253 (1976).
E.A. Fitzgerald, G.P. Watson, R.E. Proano, D.G. Ast, P.D. Kirchner, G.D. Pettit, and J.M. Woodall, J. Appl. Phys, 65, 2220 (1989).
A. Lefebvre, C. Herbeaux, C. Bouillet, and J. Di Persio, Phil. Mag. Lett., 63, 23 (1991).
Acknowledgements
This work was supported in part by North American Philips Corporation, and by the National Science Foundation, Grant #DMR-9009028.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Schowalter, L., Taylor, A., Petruzzello, J. et al. Control of threading dislocations in lattice-mismatched heteroepitaxy. MRS Online Proceedings Library 263, 485–490 (1992). https://doi.org/10.1557/PROC-263-485
Published:
Issue Date:
DOI: https://doi.org/10.1557/PROC-263-485