Skip to main content
SpringerLink
Log in

Reactions of Titanium Films with thin Silicon Dioxide, Nitride, and Oxynitride Films During Rapid Thermal Annealing

  • Published:
MRS Online Proceedings Library Aims and scope

Abstract

The interactions of Ti with SiO2, Si3N4, and SiOiNy have been studied during rapid thermal annealing at 400 to 900 °C in Ar with 3% H2 ambient. X-ray diffraction, sheet resistance measurements, RBS, nuclear reaction technique to profile hydrogen, and microscopy have been employed in this study. The results of this investigation indicate that Si3N4 and SiOxNy are more stable with Ti than SiO2.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. S. P. Murarka, Slicide for VLSI Applications. Academic Press New York 1983.

    Google Scholar 

  2. T. Brat, C. M. Osburn, T. Finstand, J. Liu, and B. Ellington, J. Electrochem. Soc, 133 1451 (1986).

    CAS  Google Scholar 

  3. S. P. Murarka, J. Vac. Sci. Tcchnol. B4 1325 (1986).

    Google Scholar 

  4. M. E. Alpcrin, T. C. Holloway, R. A. Hakcn, C. D. Gosmeyer, R. V. Karmaugh, and W. D. Parmantie, IEEE Trans, Electron Devies, ED-32 141 (1985).

    Google Scholar 

  5. S. P. Murarka, J. Vac. Sci. Technol., 17, 775 (1980).

    CAS  Google Scholar 

  6. W. A. Lanford, H. P. Trautvetter, J. F. Zicglcr, and J. Keller, Appl. Phys. Lett. 28 566 (1976)

    CAS  Google Scholar 

  7. C. T. Ming, M. Wittmer, S. S. Tyer, and S. B. Brodsky, J. Electrochem. Soc. 131 2934 (1984).

    Google Scholar 

  8. J. A. Taylor and S. B. Dcsu, J. Amcr. Ccrm. Soc. 72 1947 (1989).

    CAS  Google Scholar 

  9. A. E. Morgan, E. K. Broadbent, amd D. K. Sadana, Appl. Phys. Lett., 49 1236 (1986).

    CAS  Google Scholar 

  10. S. Q. Wang and J. W. Mayer. J. Appl. Phys., 67 2932 (1990).

    CAS  Google Scholar 

  11. R. Beyers, R. Sinclair and M. E. Thomas, J. Vac. Sci. Technol. B2 781 (1984).

    Google Scholar 

Download references

Acknowledgements

Authors would like to thank Intel, SEMATECH, MRC, and NRL for supports of this work.

Author information

Authors and Affiliations

  1. Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY, 12180, USA

    Sen-Hou Ko, N. M. Devashrajee & Shyam P. Murarka

  2. Department of Physics State University of New York at Albany, Albany, New York, USA

    Pei-Jun Ding & William A. Lanford

Authors
  1. Sen-Hou Ko
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. N. M. Devashrajee
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Shyam P. Murarka
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. Pei-Jun Ding
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. William A. Lanford
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Ko, SH., Devashrajee, N.M., Murarka, S.P. et al. Reactions of Titanium Films with thin Silicon Dioxide, Nitride, and Oxynitride Films During Rapid Thermal Annealing. MRS Online Proceedings Library 260, 665–671 (1992). https://doi.org/10.1557/PROC-260-665

Download citation

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1557/PROC-260-665

Search

Navigation