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Ge/Pd and Si/Pd/Ge/Pd Non-Alloyed Ohmic Contacts to InP Examined by Backside Secondary Ion Mass Spectrometry

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Abstract

High resolution SIMS (secondary ion mass spectrometry) depth profiles of Ge/Pd and Si/Pd/Ge/Pd non-alloyed ohmic contacts on InP are obtained by sputter-etching from the back (semiconductor) side. The samples contain an InGaAs etch stop layer, to allow chemical thinning, and InGaAsP marker layers, which allow alignment and calibration of the depth profiles. Detailed comparisons are made to corresponding contacts on GaAs, processed and analyzed under similar conditions. The importance of interfacial alloy formation, semiconductor regrowth, and dopant incorporation are highlighted.

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Acknowledgments

M.A.A. Pudensi acknowledges financial support from CNPq-Brazil. UCSD acknowledges financial support from DARPA and ONR.

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Authors and Affiliations

  1. Bellcore, Red Bank, NJ, 07701-7040, USA

    S. A. Schwarz, T. Sands, R. Bhat & M. Koza

  2. IFGW-UNICAMP, 13081, Campinas, Brazil

    M. A. A. Pudensi

  3. Dept. of Elec. Eng., Texas A&M Univ., College Station, TX, 77843, USA

    L. C. Wang

  4. Dept. of Elec, and Comp. Eng., UC-San Diego, La Jolla, CA, 92093, USA

    S. S. Lau

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  1. S. A. Schwarz
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  2. T. Sands
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  3. R. Bhat
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  4. M. Koza
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  5. M. A. A. Pudensi
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  6. L. C. Wang
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  7. S. S. Lau
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Schwarz, S.A., Sands, T., Bhat, R. et al. Ge/Pd and Si/Pd/Ge/Pd Non-Alloyed Ohmic Contacts to InP Examined by Backside Secondary Ion Mass Spectrometry. MRS Online Proceedings Library 260, 525–530 (1992). https://doi.org/10.1557/PROC-260-525

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  • DOI: https://doi.org/10.1557/PROC-260-525

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