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Macro-Trench Studies of Surface Reaction Probability of a-Si:H Film Growth

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Abstract

Using a “macro-trench” technique, the surface reaction probabilities β of the a-Si:H growth precursors for remote hollow cathode silane discharge (HC) and reactive magnetron sputter deposition (RMS) are measured. Both deposition methods produce state of the art photo-electronic quality a-Si:H. For the HC case, β= 0.28 ± 0.05, whereas for RMS deposition β ≈ 0.97 ± 0.05. We conclude that β is not universally correlated with film quality, and discuss mitigating factors present in RMS deposition that permit high quality film to be deposited despite the high film precursor reactivity.

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AcknowledgmentS

This work was supported by the Electric Power Research Institute and World Bank Project XVII.

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Authors and Affiliations

  1. Coordinated Science Laboratory and the Department of Materials Science and Engineering, University of Illinois, Urbana, IL, 61801, USA

    A. Nuruddin, J. R. Doyle & J. R. Abelson

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  1. A. Nuruddin
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  2. J. R. Doyle
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  3. J. R. Abelson
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Nuruddin, A., Doyle, J.R. & Abelson, J.R. Macro-Trench Studies of Surface Reaction Probability of a-Si:H Film Growth. MRS Online Proceedings Library 258, 33–37 (1992). https://doi.org/10.1557/PROC-258-33

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  • DOI: https://doi.org/10.1557/PROC-258-33

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