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Growth and Structure of Microcrystalline Silicon by Reactive DC Magnetron Sputtering]

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Abstract

We have deposited microcrystalline silicon (μ-Si) at low temperature by reactive dc magnetron sputtering. The structure and crystallinity of the films are analyzed by in situ spectroscopie ellipsometry. μ-Si growth occurs at deposition conditions with substrate temperature between 150 ‐ 300 °C and hydrogen partial pressure above 4 mtorr. We have also observed that the deposition rate strongly affects the interface structure. At a rate of 21 Å/min, a 230 Å thick amorphous layer appears at the interface of film and glass substrate. The interface layer thickness decreases with deposition rate, and becomes undiscernible for growth rates ~ 2 Å/min. The thickness of the interface layer is also found to depend on substrates.

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Acknowledgement

The authors wish to thank J. R. Doyle for fruitful discussions throughout the course of this study. This work is supported by the Thin Film Solar Cell Program of the Electric Power Research Institute under contract EPRI RP 8001-7.

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Authors and Affiliations

  1. Coordinated Science Laboratory and the Department of Materials Science and Engineering, University of Illinois, Urbana, IL, 61801, USA

    G. F. Feng, M. Katiyar, Y. H. Yang, J. R. Abelson & N. Maley

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  1. G. F. Feng
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  2. M. Katiyar
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  3. Y. H. Yang
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  4. J. R. Abelson
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  5. N. Maley
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Feng, G.F., Katiyar, M., Yang, Y.H. et al. Growth and Structure of Microcrystalline Silicon by Reactive DC Magnetron Sputtering]. MRS Online Proceedings Library 258, 179–184 (1992). https://doi.org/10.1557/PROC-258-179

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  • DOI: https://doi.org/10.1557/PROC-258-179

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