Abstract
Epitaxial films of ferromagnetic τMnAl with perpendicular magnetization have been grown on {100}AlAs/GaAs substrates by molecular beam epitaxy. A multistep growth procedure involving the formation of a template followed by codeposition and subsequent annealing yields thin epitaxial τMnA1 films that exhibit the extraordinary Hall effect with nearly ideal hysteretic characteristics.
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Acknowledgement
We acknowledge useful conversations with A. Scherer, B. P. Vander Gaag, D. E. Aspnes, R. E. Nahory, H. L Gilchrist and C.J. Palmstrøm. The assistance of D. Loretto and the staff of the National Center for Electron Microscopy, Lawrence Berkeley Laboratory, with the electron microscopy is appreciated.
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Sands, T., Harbison, J.P., Allen, S.J. et al. Epitaxial τMnAl/AlAs/GaAs Heterostructures with Perpendicular Magnetization. MRS Online Proceedings Library 231, 341–346 (1991). https://doi.org/10.1557/PROC-231-341
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DOI: https://doi.org/10.1557/PROC-231-341