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Real Time X-Ray Studies of Interface Kinetics in Epitaxial Strained Layers

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Abstract

A new time-resolved x-ray method of probing the kinetics of interfacial strains in semiconductor heterostructures is presented. High-resolution synchrotron radiation measurements of the strain relaxation during rapid thermal annealing (RTA) show that the lattice strain of an as-grown strained layer structure GaAs-Inx.Ga1−x-As-GaAs/GaAs is relieved cooperatively by a series of sluggish discontinuous transitions. We find that ion implantation enhances the annealing kinetics of InAlAs strained layers.

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Acknowledgements

The authors wish to acknowledge the support of the Army Research Office (URI Program) under contract DAAL-03-87-K0007 and NSF grant DMR 8805156. We thank Yi-Jen Chan for growing the samples used in this study.

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Authors and Affiliations

  1. Department of Physics, University of Michigan, Ann Arbor, MI, 48109, USA

    Roy Clarke & Waldemar Dos Passos

  2. AT&T Bell Laboratories, Murray Hill, NJ, 07974, USA

    Walter Lowe

  3. Advanced Photon Source, Argonne National Laboratory, Argonne, IL, 60439, USA

    Brian Rodricks & Cristine Brizard

Authors
  1. Roy Clarke
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  2. Waldemar Dos Passos
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  3. Walter Lowe
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  4. Brian Rodricks
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  5. Cristine Brizard
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Clarke, R., Passos, W.D., Lowe, W. et al. Real Time X-Ray Studies of Interface Kinetics in Epitaxial Strained Layers. MRS Online Proceedings Library 230, 225–230 (1992). https://doi.org/10.1557/PROC-230-225

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  • DOI: https://doi.org/10.1557/PROC-230-225

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