Abstract
Device-worthy films of silicon on SiO2 have been produced using laser annealing and antireflection stripes. If no seeding is used, grain boundaries will be localized beneath the stripes; with seeding, large-area single crystals can be grown, of uniform <100> orientation. N-channel transistors show a mobility of 620 cm2/V.s and present leakage currents which can be reduced, however, down to a few pA/um when the substrate (back gate) is negatively biased to − 5 V. Ring oscillators have also been made, which oscillate with a delay per stage of 1 nsec.
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Colinge, O.P., Bensahel, D., Alamome, M. et al. Beam-Recrystallized Device-Worthy Films of Si on SiO2 Via Control of the Grain Boundary Location. MRS Online Proceedings Library 23, 597–602 (1983). https://doi.org/10.1557/PROC-23-597
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DOI: https://doi.org/10.1557/PROC-23-597