Abstract
Zone melting recrystallization (ZMR) of Si films on SiO2 has produced large-area films with electrical properties approaching those of bulk wafers. The mechanisms of film formation and the use of patterning to control orientation and defect distribution are briefly reviewed. Some examples of the use of patterning are: single-grain films have been produced by means of planar constrictions; subboundaries and impurities have been entrained to lie along straight lines separated by ~100μm through the use of lithographically-defined grating patterns; a vertical-constriction technique has enabled (100) texture to be achieved in 50μm-thick Si films; a lithographically-defined orientation filter, which takes advantage of growth-velocity anisotropy, has been used to select a predetermined azimuthal orientation.
Patterning is also fundamental to graphoepitaxy. Current research emphasizes low temperature processes based on solid-state surface-energy-driven secondary grain growth.
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Smith, H.I., Thompson, C.V., Geis, M.W. et al. Zone Melting Recrystallization of Patterned Films and Low-Temperature Graphoepitaxy. MRS Online Proceedings Library 23, 459–464 (1983). https://doi.org/10.1557/PROC-23-459
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DOI: https://doi.org/10.1557/PROC-23-459