Abstract
High quality GaAs films have been deposited on sawtooth-patterned (0.2 μm period) Si substrates by MOCVD. Three inch diameter Si wafers were patterned using a combination of holographic lithography and wet chemical etching. A two-step deposition process was used resulting in planar films with surface morphology comparable to films deposited on unpatterned substrates. The initial low temperature nucleation layer was found to be amorphous and conformed to the patterned Si surface. Rapid thermal annealing and thermal cycle growth resulted in substantial reduction in the threading defect density. The MOCVD growth and characterization of these films and the possible mechanisms responsible for the reduction/elimination of the defects at the GaAs/Si interface are discussed.
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Acknowledgement
The authors wish to acknowledge the assistance of T. Ta, L. Geofroy, M. Schattenburg and S. Vernon. p]This work at Spire has been sponsored by the USARO and DARPA. The work at MIT is supported by Joint Services Electronics Program (DAAL03-89-C-0001).
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Karam, N.H., Haven, V., Ismail, K. et al. A New Approach for Low Defect Density GaAs On Patterned Si Substrates by Mocvd. MRS Online Proceedings Library 221, 399–404 (1991). https://doi.org/10.1557/PROC-221-399
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DOI: https://doi.org/10.1557/PROC-221-399