Abstract
MgO was deposited on different planes of sapphire substrates by Molecular Beam Epitaxy (MBE). Cross-sectional specimens from these systems were prepared and investigated by high resolution electron microscopy (HREM). Two different orientation relationships were obtained for MgO films deposited on the differently oriented sapphire substrate. Misfit dislocations at the interface in each case were analyzed. MgA12O4 (spinel) forms at the MgO/A12O3 interface by a solid state reaction under electron beam irradiation.
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Acknowledgement
The work at Case Western Reserve University was supported by the DARPA/ONR University Research Initiative at CWRU under contract N00014 86-K-0773. The work at the University of Illinois was supported by the Department of Energy under contract DE-AC02-76ER01 198.
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Li, D.X., Pirouz, P., Heuer, A.H. et al. Hrem Study of A Ceramic/Ceramic Interface: MgO/A12O3. MRS Online Proceedings Library 221, 331–336 (1991). https://doi.org/10.1557/PROC-221-331
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DOI: https://doi.org/10.1557/PROC-221-331