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Response Time of a-Si:H Photosensors in Optically Addressed Spatial Light Modulators

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Abstract

A successful application for a-Si:H is as the photosensor in a liquid crystal optically addressed spatial light modulator (OASLM). We analyze the response time of an a-Si:H p-i-n photodiode in a ”pseudo-OALSM,” in which the liquid crystal is replaced by an equivalent capacitor, under both forward and reverse bias. Under reverse bias the two important effects are the photocurrent response time, and residual trapped charge. Under forward bias the mechanism shifts from double injection regimes to ohmic transport as a function of voltage. We relate these characteristics to the operation of an OASLM.

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Acknowledgement

This work was supported by the National Science Foundation Engineering Research Center grant No. CDR-862236, and Displaytech under Contract No. N60921-90-C-0079 from the Naval Surface Warfare Center.

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Authors and Affiliations

  1. Department of Electrical and Computer Engineering, and Optoelectronic Computing Systems Center, University of Colorado, Boulder, CO, 80309-0425

    Garret Moddel & Pierre R

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  1. Garret Moddel
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  2. Pierre R
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Moddel, G., R, P. Response Time of a-Si:H Photosensors in Optically Addressed Spatial Light Modulators. MRS Online Proceedings Library 219, 155–165 (1991). https://doi.org/10.1557/PROC-219-155

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