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Schottky Barriers on Magnetron Sputtered a-Si:H: Depletion width Effects on Photocarrier Collection vs Bandgap and Light Soaking

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Abstract

We present a study of depletion width effects on the photocarrier collection efficiency in reactive magnetron sputtered a-Si:H films. Results are presented for as-deposited and light soaked 1.75 eV optical gap samples, and an as-deposited 1.60 eV gap film. The depletion width behavior with reverse bias is inferred from capacitance measurements. Comparison with photocurrent collection versus reverse bias voltage suggests that space charge effects can have an important role in the interpretation of collection efficiency on Schottky barriers.

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Acknowledgement

We would like to thank Murray Bennett of Solarex for providing the n+ substrates. This work was supported by the Thin Film Solar Cell Program of the Electric Power Research Institute under contract number RP 2824-1.

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Authors and Affiliations

  1. Coordinated Science Laboratory and Department of Materials Science, The University of Illinois, 1101 W. Springfield Ave., Urbana, IL, 61801.

    James R. Doyle, N. Maley & John R. Abelson

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  1. James R. Doyle
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  2. N. Maley
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  3. John R. Abelson
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Doyle, J.R., Maley, N. & Abelson, J. Schottky Barriers on Magnetron Sputtered a-Si:H: Depletion width Effects on Photocarrier Collection vs Bandgap and Light Soaking. MRS Online Proceedings Library 219, 111–116 (1991). https://doi.org/10.1557/PROC-219-111

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  • DOI: https://doi.org/10.1557/PROC-219-111

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