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The Use of Tris(Trimethylsilyl)Arsine to Deposit GaAs by OMCVD

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Abstract

Chemical vapor deposition experiments using (Me3Si)3As with either GaCl3 or Me3Ga at ambient pressure have produced films of GaAs on Si and semi-conducting GaAs substrates. The films have been characterized by X-ray diffraction and Auger electron spectroscopy, and each have small amounts of C and O impurities. No desired films were deposited from (C6F5)3GaAs(SiMe3)3 at 500°C and low pressures.

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Acknowledgement

We thank Dr. R. T. Holm for help with the Auger spectra and Mary Ralston for manuscript preparation. This work was supported in part by the Office of Naval Research.

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Authors and Affiliations

  1. Chemistry Division, Naval Research Laboratory, Washington, DC, 20375-5000, USA

    Alan D. Berry & Andrew P. Purdy

  2. Duke University, Durham, NC, 27706, USA

    Richard L. Wells, James W. Pasterczyk, James D. Johansen & Colin C. Pitt

Authors
  1. Alan D. Berry
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  2. Andrew P. Purdy
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  3. Richard L. Wells
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  4. James W. Pasterczyk
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  5. James D. Johansen
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  6. Colin C. Pitt
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Berry, A.D., Purdy, A.P., Wells, R.L. et al. The Use of Tris(Trimethylsilyl)Arsine to Deposit GaAs by OMCVD. MRS Online Proceedings Library 204, 107–110 (1990). https://doi.org/10.1557/PROC-204-107

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  • DOI: https://doi.org/10.1557/PROC-204-107

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