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C-Axis Resistivity of SbCℓ5-Graphite in HOPG and Single Crystal Forms

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Abstract

C-axis electrical resistivities were measured from 2–300K on SbCℓ5-graphite intercalation compounds, using both HOPG and single crystals as host materials. The resistivity of these compounds is up to an order of magnitude higher (∼10−2Ωm) than that of pure HOPG graphite. Yet, for stage n≤3 (in the case of HOPG), a metallic temperature dependence of ρC is observed throughout the entire investigated range. Higher stage compounds show metallic behavior at high temperatures, but exhibit a crossover to an activated dependence as the temperature is lowered. All samples show hysteretic behavior with cycling. A model, based on defect-mediated short-circuiting channels, is proposed to account for the existence of a metallic temperature dependence in conjunction with large resistivity.

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Authors and Affiliations

  1. Physics Department, The University of Michigan, Ann Arbor, MI, 48109, USA

    C. Uher & D. T. Morelli

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  1. C. Uher
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  2. D. T. Morelli
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Uher, C., Morelli, D.T. C-Axis Resistivity of SbCℓ5-Graphite in HOPG and Single Crystal Forms. MRS Online Proceedings Library 20, 163 (1982). https://doi.org/10.1557/PROC-20-163

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  • DOI: https://doi.org/10.1557/PROC-20-163

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