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The Influence of Substrate Patterning on Threading Dislocation Density and Residual Stress in GaAs/Si Heteroepitaxial Layers

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Abstract

The growth of GaAs films by MBE on mesa-type patterned Si substrates has been investigated. Mesa widths were varied from 10 μm to 200 μtm and were prepared using chemical etching with Si3N4 masks and reactive ion etching. The residual stress in the epitaxial layer was estimated using low temperature (7K) photoluminescence and the defect distribution was studied by cross sectional TEM, dislocation densities were in addition determined by etch pits. The residual stress and the dislocation density decreased monotonically with the reduction of growth area. By the incorporation of strained layers with the reduction of growth area, the etch pit density in GaAs layers on mesas was reduced further.

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Authors and Affiliations

  1. Department of Materials Science and Mineral Engineering, University of California, Berkeley, USA

    Hyunchul Sohn & Eicke R. Weber

  2. Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, USA

    Jay Tu & Shyh Wang

  3. Bell Communications Research, 331 Newman, Spring Road, Red Bank, NJ, 07701, USA

    Henry P. Lee

Authors
  1. Hyunchul Sohn
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  2. Eicke R. Weber
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  3. Jay Tu
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  4. Henry P. Lee
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  5. Shyh Wang
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Sohn, H., Weber, E.R., Tu, J. et al. The Influence of Substrate Patterning on Threading Dislocation Density and Residual Stress in GaAs/Si Heteroepitaxial Layers. MRS Online Proceedings Library 198, 45–49 (1990). https://doi.org/10.1557/PROC-198-45

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  • DOI: https://doi.org/10.1557/PROC-198-45

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