Abstract
Little has been published about Te-rich ZnSexTe1−x grown at low temperatures, in spite of some successes in the fabrication of wide band gap light emitting devices from ZnSeTe alloys grown at higher temperatures. We present x-ray diffraction and photoluminescence (PL) spectra for ZnSeTe epilayers and ZnSeTe/ZnTe superlattices grown by molecular beaCm epitaxy (MBE). These we compare with measurements on ZnTe, ZnSe and CdZnTe epilayers and on CdZnTe/ZnTe superlattices grown under similar conditions and also with data published for ZnSeTe alloys grown at high temperatures. Equilibrium phase diagrams for the ZnSeTe alloy system suggest a large miscibility gap at MBE growth temperatures; this may account for some unusual features in the (PL) spectra and for large line widths in the x-ray data. In spite of these possible miscibility problems, we find that ZnSeTe alloys luminesce brightly.
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Phillips, M.C., Rajakarunanayake, Y., McCaldin, J.O. et al. Growth and Characterization of ZnSeTe Epilayers and Superlattices. MRS Online Proceedings Library 198, 439–444 (1990). https://doi.org/10.1557/PROC-198-439
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DOI: https://doi.org/10.1557/PROC-198-439