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A Phase Diagram Approach for Predicting Reactions in Al/TiW(-Nitride) Thin-Films Systems

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Abstract

A quaternary phase diagram for Ti-W-N-Al has been calculated from existing thermodynamic data, and is used to predict the Al/TiW-nitride reaction. The predicted reaction products-TiAl3, WAl5, WAl12, and AlN-were observed by XRD and TEM in annealed Al/TiW(-nitride) thin films. The sheet resistance of A1/TiW films increased by an order of magnitude at 550°C, whereas the increase in the case of the Al/TiW-nitride films was not even two-fold. The formation of an interfacial AlN layer was observed in the Al/TiW-nitride metallization. This AlN layer limits the interaction between Al and TiW-nitride, thus providing good thermal stability.

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Acknowledgements

Funding for this work was obtained from the Philips Research and Development Center, Sunnyvale and the Center for Integrated Systems, Stanford University.

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Authors and Affiliations

  1. Dept. of Materials Science & Engineering, Stanford University, Stanford, CA, 94305.

    A. S. Bhansali & R. Sinclair

  2. Philips Research and Development Center, Philips Components-Signetics, Sunnyvale, CA, 94088.

    I. J. M. M. Raaijmakers, A. E. Morgan, B. J. Burrow & M. Arst

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  1. A. S. Bhansali
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  2. I. J. M. M. Raaijmakers
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  3. R. Sinclair
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  4. A. E. Morgan
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  5. B. J. Burrow
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  6. M. Arst
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Bhansali, A.S., Raaijmakers, I.J.M.M., Sinclair, R. et al. A Phase Diagram Approach for Predicting Reactions in Al/TiW(-Nitride) Thin-Films Systems. MRS Online Proceedings Library 187, 15–20 (1990). https://doi.org/10.1557/PROC-187-15

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  • DOI: https://doi.org/10.1557/PROC-187-15

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