Abstract
We have studied the formation of metal silicides in-situ in an ultra-high vacuum transmission electron microscope. Metals were deposited on in-situ cleaned, reconstructed silicon surfaces and annealed. For the metals Ni and Co, we find that the phase sequence in ultra-thin films is different from that seen in ≈1000 Å thick films, and attribute this to the high surface-to-volume ratio. In general reactions occur at room temperature, to form an epitaxial phase if possible. We report preliminary new results on the formation of Pd2Si.
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References
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Acknowledgement
The author is grateful for the technical assistance of M. L. McDonald, F. C. Unterwald and D. Bahnck. The assistance of J. L. Batstone was also invaluable.
We show that in-situ TEM is very well-suited for such in-situ studies. It has both monolayer sensitivity, and penetration power to study film microstructure and interfacial structure. It is not well appreciated that interfacial structure can be studied in plan-view geometry, but the example of the well-ordered interfacial reconstruction at the Si/CoSi 2 (100) interface demonstrates that well.
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Gibson, J., Loretto, D. & Cherns, D. In-Situ Transmission Electron Microscopy of the Formation of Metal-Semiconductor Contacts. MRS Online Proceedings Library 181, 91–96 (1990). https://doi.org/10.1557/PROC-181-91
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DOI: https://doi.org/10.1557/PROC-181-91