Skip to main content
SpringerLink
Log in

Acceptor Delta-Doping for Schottky Barrier Enhancement on n-Type GaAs

  • Published:
MRS Online Proceedings Library Aims and scope

Abstract

The incorporation of thin C- or Zn-doped layers under metal Schottky contacts on n-type GaAs can lead to significant enhancements in the effective barrier height. A single C δ-doped layer (p = 1.3 × 1020 cm−3) within 100 ° of the surface leads to a barrier height of −0.9 eV, a significant increase over the value for a control sample (−0.75 eV). The use of two sequential δ-doped layers can lead either to a further enhancement in barrier height, or a decrease depending on whether these layers are fully depleted at zero applied bias. The temperature dependence of current conduction in barrier-enhanced diodes was measured. Both the ideality factor and breakdown voltage degrade with increasing temperature. Zinc δ-doping in a similar fashion produces barrier heights of 0.81 eV for one spike and 0.95 eV for two spikes.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. W. E. Spicer, I. Lindau, P.R. Skeath, C.Y. Su, and P. Thye, Phys. Rev. Lett. 44, 420 (1980).

    Article  CAS  Google Scholar 

  2. W. E. Stanchina, M. D. Clark, K. V. Vaidyanathan, R. A. Jullefis, and C. R. Crowell, J. Electrochem. Soc. 134, 967 (1987).

    Article  CAS  Google Scholar 

  3. K. L. Priddy, D. R. Kitchen, J. A. Grzyb, C. W. Litton, T. S. Henderson, C.-K. Peng, W. F. Kopp, and H. Morkoc, IEEE Electron Devices ED-34, 175 (1987).

    Article  CAS  Google Scholar 

  4. C. R. Crowell, J. Vac. Sci. Technol. 11, 951 (1974).

    Article  CAS  Google Scholar 

  5. J. M. Shannon, Solid-State Electron. 19, 537 (1976).

    Article  Google Scholar 

  6. J. M. Shannon, Appl. Phys. Lett. 25, 75 (1974).

    Article  CAS  Google Scholar 

  7. S. J. Eglash, S. Pan, D. Mo, W. E. Spicer, and D. M. Collins, Jpn. J. Appl. Phys. 22, 431 (1983).

    Article  CAS  Google Scholar 

  8. A. Van der Ziel, Solid-State Electron. 20, 269 (1977).

    Article  Google Scholar 

  9. S. J. Eglash, N. Newman, S. Pan, K. Shenai, W. E. Spicer, and D. M. Collins, J. Appl. Phys. 61, 5159 (1987).

    Article  CAS  Google Scholar 

  10. K. Saito, E. Tokumitsu, T. Akasuka, M. Miyauchi, T. Yamada, M. K. Konagai, and K. Takahashi, J. Appl. Phys. 64, 3975 (1988).

    Article  CAS  Google Scholar 

  11. N. Kobayashi, T. Makimoto, and Y. Horikoshi, Appl. Phys. Lett. 50 1435 (1987).

    Article  CAS  Google Scholar 

  12. M. Eizenberg, A. C. Callegari, D. K. Sadana, H. J. Hovel, and T. N. Jackson, Appl. Phys. Lett. 54, 1696 (1989).

    Article  CAS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. AT&T Bell Laboratories, Murray Hill, NJ, 07974

    S. J. Pearton, F. Ren, C. R. Abernathy, A. Katz, W. S. Hobson, S. N. G. Chu & J. Kovalchick

Authors
  1. S. J. Pearton
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. F. Ren
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. C. R. Abernathy
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. A. Katz
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. W. S. Hobson
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. S. N. G. Chu
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. J. Kovalchick
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Pearton, S.J., Ren, F., Abernathy, C.R. et al. Acceptor Delta-Doping for Schottky Barrier Enhancement on n-Type GaAs. MRS Online Proceedings Library 181, 491–495 (1990). https://doi.org/10.1557/PROC-181-491

Download citation

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1557/PROC-181-491

Search

Navigation