Abstract
We report on a study of hot-carrier effects on optical properties of GaAs/AlxGa1-xAs quantum wells, by photoluminescence (PL) spectroscopy in the presence of a microwave (MW) field. Both doped and undoped, multiple quantum wells (MQWs) and single quantum wells (SQWs), grown by molecular beam epitaxy (MBE), show a profound enhancement of free exciton (FE) and bound exciton (BE) (for the doped wells) PL emissions with MW irradiation. This is attributed to effects of hot-carriers induced by the MW electric field. The mechanism responsible for the strong enhancement in PL intensity of the QWs in the presence of hot-carriers is studied, and is discussed in terms of an enhanced carrier trapping by the QWs as a consequence of the MW-induced heating of the photo-excited free carriers in the AlxGa1-xAs barriers.
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Acknowledgements
This work is partially supported by the National Science Foundation (NSF) Science and Technology Center for Quantized Electronic Structures (QUEST).
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Chen, W., Holtz, P., Monemar, B. et al. Hot-Carrier Effects on Optical Properties of GaAs/AlxGai1-xAs Quantum Wells. MRS Online Proceedings Library 160, 707–712 (1989). https://doi.org/10.1557/PROC-160-707
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DOI: https://doi.org/10.1557/PROC-160-707