Skip to main content
Log in

Hot-Carrier Effects on Optical Properties of GaAs/AlxGai1-xAs Quantum Wells

  • Published:
MRS Online Proceedings Library Aims and scope

Abstract

We report on a study of hot-carrier effects on optical properties of GaAs/AlxGa1-xAs quantum wells, by photoluminescence (PL) spectroscopy in the presence of a microwave (MW) field. Both doped and undoped, multiple quantum wells (MQWs) and single quantum wells (SQWs), grown by molecular beam epitaxy (MBE), show a profound enhancement of free exciton (FE) and bound exciton (BE) (for the doped wells) PL emissions with MW irradiation. This is attributed to effects of hot-carriers induced by the MW electric field. The mechanism responsible for the strong enhancement in PL intensity of the QWs in the presence of hot-carriers is studied, and is discussed in terms of an enhanced carrier trapping by the QWs as a consequence of the MW-induced heating of the photo-excited free carriers in the AlxGa1-xAs barriers.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Similar content being viewed by others

References

  1. T. Ando, A.B. Fowler and F. Stern, Rev. Mod. Phys. 54, 437 (1982).

    Article  CAS  Google Scholar 

  2. C.H. Yang, J.M. Carlson-Swindle, S.A. Lyon and J.J. Warlock, Phys. Rev. Lett. 55, 2359 (1985).

    Article  CAS  Google Scholar 

  3. K. Kash, J. Shah, D. Block, A.C. Gossard and W. Wiegmann, Physica B134, 189 (1985).

    Google Scholar 

  4. J. Shah, A. Pinczuk, A.C. Gossard and W. Wiegmann, Phys. Rev. Lett. 54, 2045 (1985).

    Article  CAS  Google Scholar 

  5. B.C. Cavenett and E.J. Pakulis, Phys. Rev. B32, 8449 (1985).

    Article  Google Scholar 

  6. P.O. Holtz, M. Sundaram, K. Doughty, J.L. Merz and A.C. Gossard, to be published in Phys. Rev. B.

  7. J. Schmidt and I. Solomon, J. Appl. Phys. 37, 3719 (1966).

    Article  CAS  Google Scholar 

  8. A. Wittlin, W. Knap, Z. Wilamowski and M. Grynberg, Solid State Commun. 36, 233 (1980).

    Article  CAS  Google Scholar 

  9. P.G. Baranov, Yu.P. Veshchunov, R.A. Zhitnikov, N.G. Romanov and Yu.G. Shreter, JETP Lett. 26, 249 (1977).

    Google Scholar 

  10. R. Romestain and C. Weisbuch, Phys. Rev. Lett. 45, 2067 (1980).

    Article  CAS  Google Scholar 

  11. F.P. Wang, B. Monemar and M. Ahlström, Phys. Rev. B39, 11195 (1989).

    Article  Google Scholar 

  12. E.J. Pakulis and G.A. Northrop, Appl. Phys. Lett. 50, 1672 (1987).

    Article  CAS  Google Scholar 

  13. M. Godlewski, H. Weman, F.P. Wang, B. Monemar, W.M. Chen and Q.X. Zhao, Mat. Res. Soc. Symp. Proc. Vol. 104, 117 (1988).

    Article  CAS  Google Scholar 

  14. W.M. Chen, Q.X. Zhao, M. Ahlström and B. Monemar, in The Physics of Semiconductors, ed. W. Zawadzki (Institute of Physics, Polish Academy of Sciences, Warsaw, 1988) p.279.

  15. E.O. Goebel, H. Jung, J. Kuhl and K. Ploog, Phys. Rev. Lett. 51, 1588 (1983).

    Article  CAS  Google Scholar 

  16. A. Chomette, B. Deveaud, A. Regreny and G. Bastard, Phys. Rev. Lett. 57 1464 (1986).

    Article  CAS  Google Scholar 

Download references

Acknowledgements

This work is partially supported by the National Science Foundation (NSF) Science and Technology Center for Quantized Electronic Structures (QUEST).

Author information

Authors and Affiliations

Authors

Rights and permissions

Reprints and permissions

About this article

Cite this article

Chen, W., Holtz, P., Monemar, B. et al. Hot-Carrier Effects on Optical Properties of GaAs/AlxGai1-xAs Quantum Wells. MRS Online Proceedings Library 160, 707–712 (1989). https://doi.org/10.1557/PROC-160-707

Download citation

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1557/PROC-160-707

Navigation