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High-Purity Germanium Crystal Growing

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Abstract

The germanium crystals used for the fabrication of nuclear radiation detectors are required to have a purity and crystalline perfection which is unsurpassed by any other solid material. These crystals should not have a net electrically active impurity concentration greater than 10l0 cm−3 and be essentially free of charge trapping defects.

Such perfect crystals of germanium can be grown only because of the highly favorable chemical and physical properties of this element. However, ten years of laboratory scale and commercial experience has still not made the production of such crystals routine. The origin and control of many impurities and electrically active defect complexes is now fairly well understood but regular production is often interrupted for long periods due to the difficulty of achieving the required high purity or to charge trapping in detectors made from crystals seemingly grown under the required conditions.

The compromises involved in the selection of zone refining and crystal grower parts and ambients is discussed and the difficulty in controlling the purity of key elements in the process is emphasized. The consequences of growing in a hydrogen ambient are discussed in detail and it is shown how complexes of neutral defects produce electrically active centers.

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Authors and Affiliations

  1. Lawrence Berkeley Laboratory, University of California, Berkeley, CA, 94720, USA

    W. L. Hansen & E.E. Haller

  2. Department of Materials Science, University of California, Berkeley, CA, 94720, USA

    E.E. Haller

Authors
  1. W. L. Hansen
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  2. E.E. Haller
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Hansen, W.L., Haller, E. High-Purity Germanium Crystal Growing. MRS Online Proceedings Library 16, 1–16 (1982). https://doi.org/10.1557/PROC-16-1

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