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X-Ray Absorption Studies of Titanium Silicide Formation at the Interface of Ti Deposited on Si

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Abstract

Near edge X-ray absorption spectra (XANES) have been obtained from the Ti K-edge for several series of titanium silicide samples produced by different techniques. Samples were fabricated by depositing Ti on silicon wafers and subsequently annealing them up to temperatures from 100°C to 900°C in UHV, vacuum furnace, or in a Rapid Thermal Annealing system. Measurements were done in the fluorescence and total electron yield modes. The XANES measurements were correlated with Raman scattering measurements. The XANES data of several reference compounds were obtained, and the data showed a high sensitivity to changes in the film structure. Ti metallic bonding and Ti-Si bonds can be distinguished and their evolution as a function of annealing is related to previous results. For the samples with increased impurities, Ti regions were stable at higher temperatures. The XANES spectra of samples annealed under N2 indicate the formation of a surface nitride.

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Authors and Affiliations

  1. Department of Physics, North Carolina State University, Raleigh, NC, 27695-8202, USA

    D. B. Aldrich, R. W. Fiordalice, Q. Islam, R. J. Nemanich & D. E. Sayers

  2. Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC, 25695, USA

    R. W. Fiordalice & H. Jeon

Authors
  1. D. B. Aldrich
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  2. R. W. Fiordalice
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  3. H. Jeon
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  4. Q. Islam
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  5. R. J. Nemanich
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  6. D. E. Sayers
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Aldrich, D.B., Fiordalice, R.W., Jeon, H. et al. X-Ray Absorption Studies of Titanium Silicide Formation at the Interface of Ti Deposited on Si. MRS Online Proceedings Library 159, 167–172 (1989). https://doi.org/10.1557/PROC-159-167

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