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In-Situannealing Transmission Electron Microscopy(Tem) Study of the Ti/GaAs Interfacial Reactions

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Abstract

In-situ annealing TEM experiments were performed on the Ti/GaAs system in order to study the dynamic behavior of interfacial reactions. Both plan-view and cross-sectional samples were investigated in either diffraction and imaging (both conventional and high resolution) modes. During experiments, we observed the following: (a) At the initial stage of reaction, the TiAs phase formed at the original Ti/GaAs interface with a distinct orientation with respect to the substrate; (b) as the reaction proceeded, the TiAs phase formed in a random manner; (c) finally, the liberated Ga species from the GaAs diffused out to the metal film and formed TiGa2 phase in the plan-view sample similar to the furnace-annealed case. For the cross-sectional sample, however, we did not observe any Ti:Ga phase formation. Instead, we observed the formation of voids both in the Ti film and in the GaAs substrate. The formation of different microstructure between in-situ and furnace annealed cases is explained by the sample geometry during annealing.

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Authors and Affiliations

  1. Department of Materials Science and Engineering, Stanford University, Stanford, 94305, CA, USA

    Robert Sinclair

  2. Philips Research Laboratories Sunnyvale, Signetics Company, Sunnyvale, 94088-3409, CA, USA

    Ki-Bum Kim

Authors
  1. Ki-Bum Kim
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  2. Robert Sinclair
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Kim, KB., Sinclair, R. In-Situannealing Transmission Electron Microscopy(Tem) Study of the Ti/GaAs Interfacial Reactions. MRS Online Proceedings Library 148, 21–27 (1989). https://doi.org/10.1557/PROC-148-21

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