Abstract
Using a real-time surface probe with 0.01 monolayer (ML) sensitivity, we determine the rate-limiting steps for atmospheric-pressure, alternating-layer-epitaxy OMCVD growth on (001) and (110) GaAs with trimethylgallium and arsine sources. The reaction of TMG with AsH3-saturated (001) GaAs is limited by a competition between decomposition (at 39 kcal/mole) and desorption of TMG chemisorbed (at −26 kcal/mole) via an excluded-volume mechanism. The reaction of AsH3with TMG-saturated (001) GaAs shows an initial fast transient followed by a slower recovery. On (110) GaAs, TMG reacts essentially instantaneously with an AsH3-saturated surface while the reaction of AsH3 with a TMG-saturated surface is relatively slow. In the latter case temperature and pressure dependences indicate a fast AsH3-surface reaction that is blocked by an adsorbed species that must be desorbed before the AsH3-surface reaction can take place.
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Aspnes, D.E., Bhat, R., Colas, E. et al. Kinetic Limits to Growth on GaAs by OMCVD. MRS Online Proceedings Library 145, 99–106 (1989). https://doi.org/10.1557/PROC-145-99
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DOI: https://doi.org/10.1557/PROC-145-99