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Charge Carrier Recombination in AlGaAs Studied by Time-Resolved Microwave Conductivity Experiments

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Abstract

AlxGa1-xAs films, doped with silicon in the 1 x 1018 cm-3 range, have been prepared in the composition range x = 0.20 - 0.46 by molecular beam epitaxy. The influence of defect states on excess carrier trapping and recombination processes is studied by a contactless transient photoconductivity technique in the microwave region. Effective electron life- times in the 1 x 10-5s range for the 20% Al film down to the 1 x 10-7s range for the 46% Al film were found, indicating a larger density of electron traps in more Al rich films. The decay kinetics in AlGaAs is compared with the decay kinetics in GaAs.

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Authors and Affiliations

  1. Boston University, College of Engineering, Boston, 02215, MA, USA

    A. Werner, A. M. Agarwal & T. D. Moustakas

  2. Hahn-Meitner-Institut, D-1000, Berlin 39 W., Germany

    M. Kunst

Authors
  1. A. Werner
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  2. A. M. Agarwal
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  3. T. D. Moustakas
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  4. M. Kunst
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Werner, A., Agarwal, A.M., Moustakas, T.D. et al. Charge Carrier Recombination in AlGaAs Studied by Time-Resolved Microwave Conductivity Experiments. MRS Online Proceedings Library 145, 481–485 (1989). https://doi.org/10.1557/PROC-145-481

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  • DOI: https://doi.org/10.1557/PROC-145-481

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