Abstract
We present various x-ray diffraction phenomena from semiconductor hetero-epitaxial layers. Each of these phenomena gives useful information on the layers. Knowing what to look for in the x-ray rocking curve (XRC) can make this nondestructive technique a very powerful tool for characterization of a few A-several g.tm thick layers We discuss the use of individual Bragg peak, diffraction fringe, and interference structure to obtain layer information. We particularly emphasize the use of x-ray interference in studying buried strained quantum well or quantum barrier layers. We present experimental rocking curves of an AlGaAs/GaAs double heterojunction laser structure and GaInAs/GaAs strained layer superlattices in both <001> and <111> orientations.
Similar content being viewed by others
References
M.A.G. Halliwell, M.H. Lyons, and M.J. Hill, J. Cryst. Growth 68, 523 (1984).
V.S. Speriosu and T. Vreeland, Jr., J. Appl. Phys. 56, 1591 (1984).
C.R. Wie, H.M. Kim, and K.M. Lau, SPIE Proc. 877, 41 (1988).
C.R. Wie, Y-W. Choi, H.M. Kim, J.F. Chen, T. Vreeland, Jr. J.C. Tsai, this MRS Proc.
C.R. Wie, J. Appl. Phys., to appear in 15 July 1989 issue.
P.F. Fewster and C.J. Curling, J. Appl. Phys. 62, 4154 (1987).
V.S. Speriosu, J. Appl. Phys. 52, 6094 (1981).
C.R. Wie, T.A. Tombrello, and T. Vreeland, Jr., J. Appl. Phys. 59, 3743 (1986).
W.J. Bartels and W. Nijman, J. Cryst. Growth, 44, 518 (1978).
F.A. Jenkins and H.E. White, Fundamentals of Optics, 4th ed., (McGraw-Hill, 1976, NY), pp. 315 – 377.
C.R. Wie, J. Appl. Phys. 65, 1036 (1989).
C.R. Wie, J.C. Chen, H.M. Kim, P.L. Liu, Y.-W. Choi, and D.M. Hwang, Appl. Phys. Lett., submitted May 1989.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Wie, C.R. X-Ray Interference Measurements of Ultrathin Semiconductor Layers. MRS Online Proceedings Library 145, 467–473 (1989). https://doi.org/10.1557/PROC-145-467
Published:
Issue Date:
DOI: https://doi.org/10.1557/PROC-145-467