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X-Ray Interference Measurements of Ultrathin Semiconductor Layers

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Abstract

We present various x-ray diffraction phenomena from semiconductor hetero-epitaxial layers. Each of these phenomena gives useful information on the layers. Knowing what to look for in the x-ray rocking curve (XRC) can make this nondestructive technique a very powerful tool for characterization of a few A-several g.tm thick layers We discuss the use of individual Bragg peak, diffraction fringe, and interference structure to obtain layer information. We particularly emphasize the use of x-ray interference in studying buried strained quantum well or quantum barrier layers. We present experimental rocking curves of an AlGaAs/GaAs double heterojunction laser structure and GaInAs/GaAs strained layer superlattices in both <001> and <111> orientations.

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Wie, C.R. X-Ray Interference Measurements of Ultrathin Semiconductor Layers. MRS Online Proceedings Library 145, 467–473 (1989). https://doi.org/10.1557/PROC-145-467

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  • DOI: https://doi.org/10.1557/PROC-145-467

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