Abstract
We demonstrate a vacuum lithography process which uses a finely focused Ga ion beam to write the pattern which is then transferred to the InP pattern by low energy dry etching. Surface steps on the order of 1000-2000A in height, and lateral resolution limited only by size of the ion beam, can be efficiently prepared using moderate Ga ion fluences. The surfaces prepared by this process are damage free and suitable for epitaxial overgrowth. GaInAs/InP heterostructures grown on in-situ patterned substrates show excellent morphology and high luminescence efficiency.
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References
A. Takamori, Ε. Miyauchi, Η. Arimoto, Y. Bamba, and H. Hashimoto, Jpn. J. Appl. Phys. 23, L599 (1984).
Y. Ochiai, K. Gamo, and S. Namba, J. Vac. Sci. Tcchnol. B3, 671 (1985).
L. R. Harriott, Appl. Surf. Sci. 34, 11 (1988).
J. Melngailis, J. Vac. Sci. Technol. B5, 496 (1987).
Proceedings Japan-US Seminar on Focused Ion Beam Technology and Applications, edited by L. R. Harriott, in J. Vac. Sci. Technol. B6, 966–1025 (1988).
H. Temkin, L. R. Harriott, and M. B. Panish, Appl. Phys. Lett. 52, 1478, (1988)
H. Temkin, L. R. Harriott, R. A. Hamm J. Weiner, and M. B. Panish, Appl. Phys. Lett. 54, 1465 (1989).
M. B. Panish, H. Temkin, and S. Sumski, J. Vac. Sci. Technol. B3, 657 (1985).
M. B. Panish, Prog. Cryst. Growth Charact. 12, 1 (1986).
N. L. DeMeo, J. P. Donnelly, F. J. O’Donnell, M. W. Geis, and K. J. O’Connor, Nucl. Instrum. Methods B7, 814 (1985).
O. Wada, J. Phys. D17, 2429 (1984).
L. R. Harriott, R. E. Scotti, K. D. Cummings, and A. F. Ambrose, J. Vac. Sci. Technol. B5, 207 (1988).
H. Temkin and B. V. Dutt, Mat. Res. Soc. Symp. Proc. vol. 14, 253 (1983).
P. H. LaMarche, R. Levi-Setti, and Y. L. Wang, J. Vac. Sci. Technol. B1, 1056 (1983).
Κ. D. Cummings, L. R. Harriott, G. C. Chi, and F. Ostermayer, Jr., Appl. Phys. Lett. 48, 659 (1986).
H. Arimoto, M. Kosugi, H. Kitada, and E. Miyauchi, Micro Circuit Engineering 1988, Vienna.
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Temkin, H., Harriott, L.R., Weiner, J. et al. High Quality Epitaxial Growth on in-Situ Patterned Inp Substrates. MRS Online Proceedings Library 145, 39–46 (1989). https://doi.org/10.1557/PROC-145-39
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DOI: https://doi.org/10.1557/PROC-145-39