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Composition Profiles in AlGaAs/GaAs and InGaAs/InP Strutures Examined by Convergent Beam Electron Diffraction

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Abstract

The large angle method of convergent beam electron diffraction (LAMED) has been used to examine multi-quantum well (M1W) and single quantum well (SQW) samples of AlGaAs/GaAs and InP/InGaAs viewed approximately along the growth direction. The method combines an image of the specimen with the rocking curve, typically over about 6° for a selected reflection. LACBED patterns fran MQW samples show many orders of superlattice satellite reflections and can be used to profile compositions in both periodic and less regular structures. For SQW samples, we can measure the local quantum well thickness to near-monolayer precision.

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References

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Cherns, D., Jordan, I.K. & Vincent, R. Composition Profiles in AlGaAs/GaAs and InGaAs/InP Strutures Examined by Convergent Beam Electron Diffraction. MRS Online Proceedings Library 138, 431–436 (1988). https://doi.org/10.1557/PROC-138-431

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  • DOI: https://doi.org/10.1557/PROC-138-431

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