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Characterization of an Ultra Thin Dense Hafnium Oxide Compact Layer with Electrochemical Impedance Spectroscopy for Dye-Sensitized Solar Cell Application

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Abstract

The performance of dye-sensitized solar cells (DSSCs) is limited by the back-reaction of photogenerated electrons from the photoelectrode back into the electrolyte solution. An atomic layer deposited (ALD) hafnium oxide (HfO2) ultra thin, a few nanometers, compact layer was grown on the surface of the transparent conducting oxide (TCO) and its effects on the performance of DSSCs were studied with dark and illuminated current-voltage and electrochemical impedance spectroscopy (EIS) measurements. Further, the theory of electron recombination at the TCO/electrolyte interface was developed and used to explain the improved DSSC performance with an ALD HfO2 compact layer.

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Authors and Affiliations

  1. Mahdi Farrokh Baroughi and David Galipeau Department of Electrical Engineering and Computer Science South Dakota State University, Brookings, 57007, SD, USA

    Braden Bills & Mariyappan Shanmugam

Authors
  1. Braden Bills
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  2. Mariyappan Shanmugam
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Bills, B., Shanmugam, M. Characterization of an Ultra Thin Dense Hafnium Oxide Compact Layer with Electrochemical Impedance Spectroscopy for Dye-Sensitized Solar Cell Application. MRS Online Proceedings Library 1260, 1036 (2010). https://doi.org/10.1557/PROC-1260-T10-36

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  • DOI: https://doi.org/10.1557/PROC-1260-T10-36

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