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Focused Ion Beam Implantation of GaAs-GaAlAs Quantum Well Structures

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Abstract

The effects of Implantation Enhanced Interdiffusion (IEI) in GaAs-GaAlAs quantum well structures are investigated. A Focused Ion Beam (FIB) source is used to implant narrow lines (500Å wide) with Ga+ ions. IEI in these structures is characterized by low temperature Cathodoluminescence. The dose effects and annealing kinetics dependence on IEI are presented. An unusual damage distribution which produces IEI deep below the surface is observed for the case of FIB implant. The possible origins of this effect and the limits of IEI for processing quantum wires and boxes are discussed.

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Authors and Affiliations

  1. Materials Department and Electrical and Computer Engineering Department, University of California, Santa Barbara, CA, 93106, USA

    P. M. Petroff, Xueyu Qian, Per Olof Holtz, R. J. Simes, J. H. English & J. Merz

  2. Hughes Research Laboratories, 3011 Malibu Canyon Road, Malibu, CA, 90265, USA

    R. Kubena

Authors
  1. P. M. Petroff
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  2. Xueyu Qian
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  3. Per Olof Holtz
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  4. R. J. Simes
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  5. J. H. English
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  6. J. Merz
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  7. R. Kubena
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Petroff, P., Qian, X., Holtz, P. et al. Focused Ion Beam Implantation of GaAs-GaAlAs Quantum Well Structures. MRS Online Proceedings Library 126, 55–63 (1988). https://doi.org/10.1557/PROC-126-55

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  • DOI: https://doi.org/10.1557/PROC-126-55

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