Abstract
Epitaxial graphene (EG) grown on the carbon-face of SiC has been shown to exhibit higher carrier mobilities in comparison to other growth techniques amenable to wafer-scale graphene fabrication. The transfer of large area (>mm2) graphene films to substrates amenable for specific applications is desirable. We demonstrate the dry transfer of EG from the C-face of 4H-SiC onto SiO2, GaN and Al2O3 substrates via two approaches using either 1) thermal release tape or 2) a spin-on, chemically-etchable dielectric. Van der Pauw devices fabricated from C-face EG transferred to SiO2 gave similar mobility values and up to three fold reductions in carrier density in comparison to devices fabricated on as-grown material.
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Caldwell, J.D., Anderson, T.J., Hobart, K.D. et al. Dry Techniques for Epitaxial Graphene Transfer. MRS Online Proceedings Library 1259, 1805 (2010). https://doi.org/10.1557/PROC-1259-S18-05
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DOI: https://doi.org/10.1557/PROC-1259-S18-05