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Four stable magnetization states formed in a single layer of GaMnAs ferromagnetic film

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Abstract

GaMnAs ferromagnetic semiconductor films under compressive strain are characterized by strong biaxial in-plane anisotropy, which generates four stable magnetization directions at zero magnetic field. This feature results in double switching behavior during magnetization reversal process measured by planar Hall resistance (PHR). Minor scans of the PHR exhibit staggered asymmetric loops due to the formation of stable muti-domain structures. We show that the resulting four stable PHR states can serve as quaternary logic states for a spin memory device.

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Acknowledgments

This work was supported by the Korea Science and Engineering Foundation (KOSEF) Grant funded by the Korean Government (MEST) (No. R01-2008-000-10057-0); by the Seoul R&DB Program; and by the National Science Foundations Grant DMR06-03762.

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Authors and Affiliations

  1. Department of Physics, Korea University, Seoul, 136-701, Korea

    Sanghoon Lee

  2. Department of Physics, University of Notre Dame, Notre Dame, 46556, USA

    X. Liu & J.K. Furdyna

Authors
  1. Sanghoon Lee
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  2. X. Liu
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  3. J.K. Furdyna
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Lee, S., Liu, X. & Furdyna, J. Four stable magnetization states formed in a single layer of GaMnAs ferromagnetic film. MRS Online Proceedings Library 1183, 31–36 (2009). https://doi.org/10.1557/PROC-1183-FF05-09

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  • DOI: https://doi.org/10.1557/PROC-1183-FF05-09

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