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Chemical beam deposition of high-k gate dielectrics on III-V semiconductors: TiO2 on In0.53Ga0.47As

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We report on the growth of high-permittivity (k) TiO2 thin films on In0.53Ga0.47As channels by chemical beam deposition with titanium isopropoxide as the source. The films grew in a reaction-limited regime with smooth surfaces. High-resolution transmission electron microscopy showed an atomically abrupt interface with the In0.53Ga0.47As channel that indicated that this interface is thermally stable. Measurements of the leakage currents using metal-oxide-semiconductor capacitors with Pt top electrodes revealed asymmetric characteristics with respect to the bias polarity, suggesting an unfavorable band alignment for CMOS applications. X-ray photoelectron spectroscopy was used to determine the TiO2/In0.53Ga0.47As band offsets. A valence band offset of 2.5 ± 0.1 eV was measured.

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Authors and Affiliations

  1. Materials Department, University of California, Santa Barbara, CA, 93106-5050, U.S.A.

    Roman Engel-Herbert, Yoontae Hwang, James M. LeBeau & Susanne Stemmer

  2. Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA, 93106-5050, U.S.A.

    Yan Zheng

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  1. Roman Engel-Herbert
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  2. Yoontae Hwang
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  3. James M. LeBeau
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  4. Yan Zheng
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  5. Susanne Stemmer
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Engel-Herbert, R., Hwang, Y., LeBeau, J.M. et al. Chemical beam deposition of high-k gate dielectrics on III-V semiconductors: TiO2 on In0.53Ga0.47As. MRS Online Proceedings Library 1155, 1302 (2008). https://doi.org/10.1557/PROC-1155-C13-02

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  • DOI: https://doi.org/10.1557/PROC-1155-C13-02

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