Abstract
The interface and electrical properties of HfAlO dielectric formed by atomic layer deposition (ALD) on sulfur-passivated GaAs were investigated. X-ray photoelectron spectroscopy (XPS) revealed the absence of arsenic oxides at the HfAlO/GaAs interface after dielectric growth and post-deposition annealing at 500 °C. A minimal increase in the amount of gallium oxides at the interface was detected between the as-deposited and annealed conditions highlighting the effectiveness of HfAlO in suppressing gallium oxide formation. An equivalent oxide thickness (EOT) of ∼ 2 nm has been achieved with a gate leakage current density of less than 10-4 A/cm2. These results testify a good dielectric interface with minimal interfacial oxides and open up potential for further investigation of HfAlO/GaAs gate stack properties to determine its viability for n-channel MOSFETs.
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Suri, R., Lichtenwalner, D.J. & Misra, V. Interface and Electrical Properties of Atomic-layer-deposited HfAlO Gate Dielectric for N-channel GaAs MOSFETs. MRS Online Proceedings Library 1155, 1006 (2008). https://doi.org/10.1557/PROC-1155-C10-06
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DOI: https://doi.org/10.1557/PROC-1155-C10-06