Abstract
Silicon nanocrystals with diameters up to 30 nm are used as nucleation seeds for fast solid phase crystallization of amorphous silicon films. Purely amorphous films required an incubation time of up to 12 hours at 600°C prior to the onset of nucleation, while films with nanocrystals embedded between layers of amorphous silicon grew immediately upon annealing in a quartz tube furnace. Structural characterization was performed by heated-stage transmission electron microscopy and Raman spectroscopy.
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Anderson, C., Kortshagen, U. Seeding Solid Phase Crystallization of Amorphous Silicon Films with Embedded Nanocrystals. MRS Online Proceedings Library 1066, 10660614 (2007). https://doi.org/10.1557/PROC-1066-A06-14
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DOI: https://doi.org/10.1557/PROC-1066-A06-14