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Space and Time Resolved Photoluminescence of Defects at Dislocations in In-Alloyed GaAs Substrate Material

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Abstract

We report a study of dislocations in In-alloyed GaAs substrate material using space and time resolved photoluminescence (PL). PL intensity maps show that an isolated dislocation cluster is in the center of a dark region with a 50μm radius surrounded by a bright region with an outer radius of 150μm. Lifetime measurements were made in the bright and dark regions. Values as long as 3.5 ns and as short as 250 psec were observed in adjacent bright and dark regions. These measurements indicate that the PL intensity contrast is explained by lifetime variations in these features. This supports the view that the dislocation cluster acts as a source and sink for defects which govern the lifetime in the surrounding material. Temperature dependence of the lifetime indicates two different defects may be involved. Both of these produce deep levels, neither one of which is EL2. A surface passivation technique is used to show that surface recombination is not important to the PL intensity contrast.

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Acknowledgments

The authors wish to acknowledge H. Kimura and H. Olsen, both of Hughes Research Laboratories, for providing In-alloyed GaAs and for characterization of the dislocations using etch techniques, Richard Miles of Caltech for computer graphics, and Ogden Marsh for suggesting the surface passivation. This research was supported in part by the Defense Advanced Research Projects Agency under Contract Number N00014-84-C-0083.

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Authors and Affiliations

  1. California Institute of Technology, Pasadena, CA, 91125, USA

    Matthew B. Johnson & T.C. McGill

  2. Hughes Research Labs, Malibu, CA, 90265, USA

    A.T. Hunter

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  1. Matthew B. Johnson
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  2. A.T. Hunter
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  3. T.C. McGill
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Johnson, M.B., Hunter, A. & McGill, T. Space and Time Resolved Photoluminescence of Defects at Dislocations in In-Alloyed GaAs Substrate Material. MRS Online Proceedings Library 104, 415–421 (1987). https://doi.org/10.1557/PROC-104-415

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  • DOI: https://doi.org/10.1557/PROC-104-415

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