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Raman Spectroscopic Evaluation of Silicides Formed with a Scanned Electron Beam

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Abstract

Raman scattering and Rutherford backscattering are used to study the products of SEM processing of Pd and Pt thin films on Si(100) substrates. The RBS measurements indicate the compositional depth profile of the resulting silicide while the Raman scattering indicates the crystal structure. For both cases it is found that the resultant silicide is dominated by Pd2Si (or Pt2Si) structures but evidence of deviations are also noted.

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Authors and Affiliations

  1. Xerox Palo Alto Research Center, Palo Alto, California, 94304, USA

    R. J. Nemanich, N. M. Johnson & M. D. Moyer

  2. Standard Electronics Laboratories, Standard, California, 94305, USA

    T. W. Sigmon

  3. University of California, San Diego, La Jolla, California, 92093, USA

    S. S. Lau

Authors
  1. R. J. Nemanich
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  2. T. W. Sigmon
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  3. N. M. Johnson
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  4. M. D. Moyer
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  5. S. S. Lau
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Nemanich, R.J., Sigmon, T.W., Johnson, N.M. et al. Raman Spectroscopic Evaluation of Silicides Formed with a Scanned Electron Beam. MRS Online Proceedings Library 1, 541 (1980). https://doi.org/10.1557/PROC-1-541

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  • DOI: https://doi.org/10.1557/PROC-1-541

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