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Electrical Characterization of Isotype n-ZnO/n-GaN Heterostructures

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Abstract

Electrical properties of n-ZnO/n-GaN isotype heterostructures obtained by rf-sputtering of ZnO films on GaN layers grown by metal-organic vapour phase epitaxy are discussed. Current-voltage (I-V) characteristics of the n-ZnO/n-GaN diodes revealed highly rectifying behavior with forward and reverse currents ∼1.43×10-2 A/cm2 and ∼2.4×10-4 A/cm2, respectively, at ±5 V. From the Arrhenius plot built using temperature dependent current-voltage characteristics (I-V-T) an activation energy 0.125 eV was derived for the reverse bias leakage current path, and 0.62 eV for the band offset from forward bias measurements. From electron-beam induced current measurements the minority carrier diffusion length in ZnO was estimated in the range 0.125-0.175 mm, depending on excitation conditions. The temperature dependent EBIC measurements yielded an activation energy of 0.462 ± 0.073 V.

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References

  1. Ü. Özgür, Ya. I. Alivov, C. Liu, A. Teke, M. Reshchikov, S. Doğan, V. Avrutin, S.-J. Cho, and H. Morkoç. Journal of Applied Physics, V. 98, 041301 (2005).

    Article  Google Scholar 

  2. D.C. Look, B. Claflin, Ya.I.Alivov, and S.J. Park, Physica Status Solidi (b) V.201, 2203 (2004)

    Article  CAS  Google Scholar 

  3. Ya. I. Alivov, E. V. Kalinina, A. E. Cherenkov, D. C. Look, B. M. Ataev, A. K.Omaev, M. V. Chukichev, and D. M. Bagnall, Appl. Phys. Lett. 83, 4719 (2003).

    Article  CAS  Google Scholar 

  4. A. Osinsky, J. W. Dong, M. Z. Kauser, B. Hertog, A. M. Dabiran, P. P. Chow, S. J. Pearton, O. Lopatiuk, and L. Chernyak, Appl. Phys. Lett. 85, 4272 (2004).

    Article  CAS  Google Scholar 

  5. Ya. I. Alivov, J.E. Van Nostrand, D.C. Look, M.V. Chukichev, and B.M. Ataev, Appl. Phys. Lett. 83, 2943 (2003).

    Article  CAS  Google Scholar 

  6. Qing-Xuan Yu, Bo Xu, Qi-Hong Wu, Yuan Liao, Guan-Zhong Wang, Rong-Chuan Fang, Hsin-Ying Lee and Ching-Ting Lee, Appl. Phys. Lett., 83, 4713 (2003).

    Article  CAS  Google Scholar 

  7. D. J. Rogers, F. Hosseini Teherani, A. Yasan, K. Minder, P. Kung, and M. Razeghi, Appl. Phys. Lett. 88, 141918 (2006)

    Article  Google Scholar 

  8. Olena Lopatiuk, Andrei Osinsky, Amir Dabiran, Konstantin Gartsman, Isai Feldman, Leonid Chernyak, Solid-State Electronics 49 (2005) 1662–1668

    Article  CAS  Google Scholar 

  9. Chernyak L, Osinsky A, Schulte A. Solid-State Electron 45, 1687 (2001)

    Article  Google Scholar 

  10. Ya. I. Alivov, X. Bo, S. Akarca-Biyikli, Q. Fan, J. Xie, N. Biyikli, K. Zhu, D. Johnstone, and H. Morkoç, J. Electron. Materials 35, 520 (2006).

    Article  CAS  Google Scholar 

  11. Ya. I. Alivov, Ü. Özgür, S. Doğan, C. Liu, Y. Moon, X. Gu, V. Avrutin, Y. Fu, and H. Morkoç, Solid State Electronics 49, 1693 (2005).

    Article  CAS  Google Scholar 

  12. I. Alivov, B, Xiao, Q. Fan, and D. Johnstone, H. Morkoç, Applied Physics Letters, in press.

  13. Soon-Ku Hong, Takashi Hanada, Hisao Makino, Hang-Ju Ko, Yefan Chen, and Takafumi Yao, Akinori Tanaka, Hiroyuki Sasaki, and Shigeru Sato, Daisuke Imai, Kiyaoki Araki, and Makoto Shinohara, J. Vac. Sci. Technol. B 19, 1429 (2001)

    Article  CAS  Google Scholar 

  14. M.A.L. Johnson, et al, J. Electron. Mater. 25, 855 (1996).

    Article  CAS  Google Scholar 

  15. A. G. Milnes and D. L. Feucht, Heterojunctions and Metal-Semiconductor Junctions (Academic, New York, 1972)

    Google Scholar 

Download references

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Authors and Affiliations

  1. Electrical Engineering, Virginia Commonwealth University, 601 W. Main Street, Richmond, VA, 23284, USA

    Yahya Alivov, Xiao Bo, Sena Akarca-Biyikli, Fan Qian & Hadis Morkoç

  2. SEMETROL, Chesterfield, VA, 23838, USA

    Daniel Johnstone

  3. Physics Department, University of Central Florida, Orlando, FL, 32816, USA

    Olena Lopatiuk-Tirpak & Leonid Chernyak

  4. Air Force Research Laboratory-retired (AFRL/MLPS), Dayton, OH, 45433, USA

    Cole Litton

Authors
  1. Yahya Alivov
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  2. Xiao Bo
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  3. Sena Akarca-Biyikli
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  4. Fan Qian
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  5. Daniel Johnstone
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  6. Olena Lopatiuk-Tirpak
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  7. Leonid Chernyak
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  8. Cole Litton
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  9. Hadis Morkoç
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Alivov, Y., Bo, X., Akarca-Biyikli, S. et al. Electrical Characterization of Isotype n-ZnO/n-GaN Heterostructures. MRS Online Proceedings Library 957, 716 (2006). https://doi.org/10.1557/PROC-0957-K07-16

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  • DOI: https://doi.org/10.1557/PROC-0957-K07-16

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