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Process-Induced Deformations and Stacking Faults in 4H-SiC

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Abstract

We used Film Stress Measurement (FSM), Transmission Electron Microscopy (TEM), and High-Resolution X-ray Diffraction (HRXRD) techniques to obtain further knowledge with respect to the deformation, warpage, and stacking faults (SF’s) that are induced in n-type 4H-SiC wafers and epilayers when subjected to mechanical polishing and high temperature (1150 oC) processing.

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Authors and Affiliations

  1. Sensors and Electronics Branch, NASA, OH, 21000 Brookpark Road, M/S 77-1, 44136, Cleveland, USA

    Robert S. Okojie

  2. Dept. Materials Science and Engineering, State University of New York, NY, 11794-2275, Stony Brook, USA

    Xianrong Huang & Michael Dudley

  3. Dept. Materials Science and Engineering, Case Western Reserve University, OH, 44106, Cleveland, USA

    Ming Zhang & Pirouz Pirouz

Authors
  1. Robert S. Okojie
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  2. Xianrong Huang
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  3. Michael Dudley
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  4. Ming Zhang
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  5. Pirouz Pirouz
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Okojie, R.S., Huang, X., Dudley, M. et al. Process-Induced Deformations and Stacking Faults in 4H-SiC. MRS Online Proceedings Library 911, 702 (2005). https://doi.org/10.1557/PROC-0911-B07-02

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  • DOI: https://doi.org/10.1557/PROC-0911-B07-02

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