Abstract
We used temperature dependent near-field magneto-photoluminescence spectroscopy to study the emission properties of blue-green InGaN quantum wells (QWs) with spatial resolution of ~100 nm. Spectral features related to single quantum dots (QDs) and In-rich islands of lateral size ~3 and ~30 nm, respectively, and larger QD ensembles have been identified. Individual QDs and In-rich islands appear to be located near dislocations and have activation energies below 30 meV. We found that at T>90 K emission from the InGaN QW occurs from “hot spots” of size ~100 nm and density ~5*108 cm−2 containing many deep QDs. The high emission intensity of these hot spots, occupying only 10% of the QW area, is attributed to the large oscillator strength of the optical transition in InGaN.
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Acknowledgements
The work was supported by Collaborative NATO Grant CBP.NR.CLG 981516 and by the RFBR program.
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Mintairov, A.M., Merz, J.L., Sizov, D.S. et al. Near-field photoluminescence spectroscopy of InGaN quantum dots.. MRS Online Proceedings Library 892, 3206 (2005). https://doi.org/10.1557/PROC-0892-FF32-06
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DOI: https://doi.org/10.1557/PROC-0892-FF32-06