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Interdiffused InGaAsP Quantum Dots Lasers on GaAs by Metal Organic Chemical Vapor Deposition

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Abstract

Self-assembled InGaAs quantum dots (QD) grown by metal organic chemical vapor deposition (MOCVD) have a natural peak emission wavelength around 1150-1200-nm due to its specific composition, shapes, and sizes. In this work, a new method to engineer the emission wavelength capability of MOCVD-grown InGaAs QD on GaAs to ∼1000-nm by utilizing interdiffused InGaAsP QD has been demonstrated. Incorporation of phosphorus species from the GaAsP barriers into the MOCVD-grown self-assembled InGaAs QD is achieved by interdiffusion process. Reasonably low threshold characteristics of ∼ 200-280 A/cm2 have been obtained for interdiffused InGaAsP QD lasers emitting at 1040-nm, which corresponds to blue-shift of ∼ 85-90-nm in comparison to that of unannealed InGaAs QD laser.

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Authors and Affiliations

  1. Center for Optical Technologies, Department of Electrical and Computer Engineering, Lehigh University, Bethlehem, PA, 18015, USA

    Ronald A. Arif & Nelson Tansu

  2. Reed Center for Photonics, Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, WI, 53706, USA

    Nam-Heon Kim & Luke J. Mawst

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  1. Ronald A. Arif
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  2. Nam-Heon Kim
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  3. Luke J. Mawst
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  4. Nelson Tansu
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Arif, R.A., Kim, NH., Mawst, L.J. et al. Interdiffused InGaAsP Quantum Dots Lasers on GaAs by Metal Organic Chemical Vapor Deposition. MRS Online Proceedings Library 891, 205 (2005). https://doi.org/10.1557/PROC-0891-EE02-05

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  • DOI: https://doi.org/10.1557/PROC-0891-EE02-05

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