Abstract
Growth of GaN bulk crystals under ammonothermal conditions has been developed. The experiments were performed in ammono-basic solutions in high nickel content autoclaves for up to 3 weeks. Nutrients were crystalline GaN made from vapor phase transport growth. Single crystal clusters of GaN on the order of 500 µm − 1 mm long were obtained. These crystals were spontaneously nucleated on the walls of the autoclave. Transport growth on polycrystalline GaN seeds and single crystal HVPE seeds was also achieved. GaN has a high solubility in ammono-basic solutions, on the order of several weight percent. The ammonothermal crystals were characterized by photoluminescence (PL), X-ray diffraction and SEM.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
Gallium Nitride 2003 - Technology Status, Applications and Market Forecasts; Strategies Unlimited (market research report).
V. Kirchner, R. Ebel, H. Heinke, S. Einfeldt, D. Hommel, H Selke, and P.L. Ryder, Mater. Sci. Eng. B59, 47 (1999).
X. Xu, R.P. Vaudo, C. Loria, A Salant, G.R. Bramdes, and J. Chaudhuri, J. Cryst. Growth 246, 223–229 (2002).
O.H. Nam, M. D. Bremser, T. S. Zheleva, and R. F. Davis, Appl. Phys. Lett. 71, 2638 (1997).
S. Porowski and I. Grzegory, in Properties of Group II Nitrides, INSPEC, The Institution of Electrical Engineers, edited by J.H. Edgar (Stevenage, UK, 1994), p. 76.
S. Kuri, T. Abe, Y. Naoi, and S. Sakai Jpn. J. Appl. Phys. 35 1637 (1996).
S. Porowski, J. Cryst. Growth 189/190, 153 (1998).
M. Aoki, H. Yamane, M. Shimada, S. Sarayma, and F. J. DiSalvo, J. Cryst. Growth 242, 70–76 (2002).
R. Dwiliński, R. Doradziński, J Garczyński, L. Sierzputowski, J.M. Baranowski, and M. Kamińska, Diamond and Related Materials 7, 1348 (1998).
J.W. Kolis, S Wilcenski, and R.A. Laudise, Mater. Res. Soc. Symp. Proc. 495, 367 (1998).
R. Dwiliński, J.M. Baranowski, and M. Kamińska, Acta physica polonica A 90, 763 (1996).
M. Suscavage, M. Harris, D. Bliss, P. Yip, S-Q Wang, D. Schwall, L. Bouthilette, J. Bailey, M. Callahan, D. C. Look, D.C. Reynolds, R. L. Jones, C. Litton, MRS Internet J. Nitride Semicond. Res. 4S1, G3.40 (1999)
Acknowledgments
We would like to thank Dr. Gerald Witt, Air Force Office of Scientific Research for partial funding and Dr. Colin Wood, Office of Naval Research and manager of the Bulk Nitride Multi University Initiative (MURI) for funding Dr. Buguo Wang’s stay at AFRL/Hanscom through the MURI program. We would especially like to thank Dr. Richard Molnar, MIT Lincoln Laboratory for suppling us with HVPE seeds.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Callahan, M.J., Wang, B., Bouthillette, L.O. et al. Growth of GaN crystals under ammonothermal conditions. MRS Online Proceedings Library 798, 344–349 (2003). https://doi.org/10.1557/PROC-798-Y2.10
Published:
Issue Date:
DOI: https://doi.org/10.1557/PROC-798-Y2.10