Abstract
In this study, InN films with thickness up to 7.5 micron were prepared by molecular beam epitaxy (MBE) on (0001) sapphire and quasi-bulk GaN templates. Previously it has been challenging to grow InN film much beyond 1 micron because the growing surface tended to become rough. Techniques to overcome this limit have been developed. Various buffer techniques were used and compared to optimize the epitaxial growth. It was found that with increasing film thickness, Hall mobility will monotonically increase, while carrier concentration decreases. Hall mobility beyond 2100 cm2/Vs with carrier concentration close to 3×1017 cm−3 was obtained at room temperature. Compared with the lowest carrier concentration ∼2×1018 cm−3 obtained on thin InN films grown at the same condition, the conclusion is that impurities from the growth environment are not responsible for the high background doping of InN. Instead, some structural defects or substrate/buffer impurities may be the major source of the unintentional doping, which can be reduced by growing thicker films.
Some results on Mg and Be doping of InN will be reported as well. To date, all Mg and Be doping attempts have resulted in n-type material.
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Lu, H., Schaff, W.J., Eastman, L.F. et al. Growth of Thick InN by Molecular Beam Epitaxy. MRS Online Proceedings Library 743, 410 (2002). https://doi.org/10.1557/PROC-743-L4.10
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DOI: https://doi.org/10.1557/PROC-743-L4.10