Skip to main content
SpringerLink
Log in

Improved Characteristics of InGaN Multi-Quantum-Well Laser Diodes Grown on Laterally Epitaxially Overgrown GaN on Sapphire

  • Published:
MRS Online Proceedings Library Aims and scope

Abstract

InGaN multi-quantum-well laser diodes have been fabricated on fully-coalesced laterally epitaxially overgrown (LEO) GaN on sapphire. The laterally overgrown ‘wing’ regions as well as the coalescence fronts contained few or no threading dislocations. Laser diodes fabricated on the low-dislocation-density wing regions showed a reduction in threshold current density from 8 kA/cm2 to 3.7 kA/cm2 compared the those on the high-dislocation ‘window’ regions. Laser diodes also showed a twofold reduction in threshold current density when comparing those on the wing regions to those fabricated on conventional planar GaN on sapphire. The internal quantum efficiency also improved from 3% for laser diodes on conventional GaN on sapphire to 22% for laser diodes on LEO GaN on sapphire.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemeto, M. Sano, and K. Chocho, Proc. Int. Conf. on Nitride Semicond., S-1, p.444 (1997).

    Google Scholar 

  2. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemeto, M. Sano, and K. Chocho, Appl. Phys. Lett. 72, 211 (1998)

    Article  CAS  Google Scholar 

  3. K. Ito, K. Hiramatsu, H. Amano, I. Akasaki, J. Cryst. Growth 104, 533 (1990)

    Article  CAS  Google Scholar 

  4. D. Kapolnek, S. Keller, R. Vetury, R. D. Underwood, P. Kozodoy, S. P. DenBaars, and U.K. Mishra, Appl. Phys. Lett. 71, 1204 (1997)

    Article  CAS  Google Scholar 

  5. T. S. Zheleva, O.-H. Nam, M. D. Bremser, and R. F. Davis, Appl. Phys. Lett. 71, 2472 (1997)

    Article  CAS  Google Scholar 

  6. O.-H. Nam, M. D. Bremser, T. S. Zheleva, and R. F. Davis, Appl. Phys. Lett. 71, 2638 (1997)

    Article  CAS  Google Scholar 

  7. H. Marchand, J. P. Ibbetson, P. T. Fini, P. Kozodoy, S. Keller, J. S. Speck, S. P. DenBaars, and U. K. Mishra, MRS Internet J. Nitride Semicond. Res. 3, 3 (1998)

    Article  Google Scholar 

  8. A. Usui, H. Sunakawa, A. Sakai, and A. A. Yamaguchi, Jpn. J. Appl. Phys. 36, L899 (1997).

    Article  CAS  Google Scholar 

  9. A. Sakai, H. Sunakawa, and A. Usui, Appl. Phys. Lett. 71, 2259 (1997)

    Article  CAS  Google Scholar 

  10. P. Kozodoy, J. P. Ibbetson, H. Marchand, P. T. Fini, S. Keller, S. Keller, J. S. Speck, S. P. DenBaars, and U. K. Mishra, Appl. Phys. Lett. 73, 957 (1998)

    Article  Google Scholar 

  11. C. Sasaoka, H. Sunakawa, A. Kimura, M. Nido, A. Usui, and A. Sakai, J. Crystal Growth 189/190, 61 (1998)

    Article  CAS  Google Scholar 

  12. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Matushita, and T. Mukai, MRS Internet J. Nitride Semicond. Res. 4S1, G1.1 (1999).

    Google Scholar 

  13. R. Vetury, H. Marchand, J. P. Ibbetson, P. Fini, S. Keller, J. S. Speck, S. P. DenBaars, and U.K. Mishra, Proceedings of the 25th Int. Symp. Comp. Semicond., Nara, Japan, 1998.

    Google Scholar 

  14. G. Parish, S. Keller, P. Kozodoy, J. P. Ibbetson, H. Marchand, P. T. Fini, S. B. Fleischer, S. P. DenBaars, U. K. Mishra, and E. J. Tarsa, Appl. Phys. Lett. 75, 247 (1999)

    Article  CAS  Google Scholar 

  15. H. Marchand, J. P. Ibbetson, P. Fini, S. Chichibu, S. J. Rosner, S. Keller, S. P. DenBaars, J. S. Speck, and U.K. Mishra, Proc. 25th Int. Symp. Comp. Semicond., Nara Japan, 1998.

    Google Scholar 

  16. K. Tsukamoto, W. Taki, N. Kuwano, K. Oki, T. Shibata, N. Sawaki, and K. Hiramatsu, Proc. 2nd Int. Symp. On Blue Laser and Light Emitting Diodes, Kisarazu, Chiba, Japan, 1998, p.488–491.

    Google Scholar 

  17. P. Fini, J. P. Ibbetson, H. Marchand, L. Zhao, S. P. DenBaars, and J. S. Speck, to be published in J. Crystal Growth (1999).

    Google Scholar 

  18. P. Fini, L. Zhao, B. Moran, M. Hansen, H. Marchand, J. P. Ibbetson, S. P. DenBaars, U.K. Mishra, and J. S. Speck, Appl. Phys. Lett. 75, 1706 (1999)

    Article  CAS  Google Scholar 

  19. L. A. Coldren and S. W. Corzine, Diode Lasers and Photonic Integrated Circuits (John Wiley & Sons, Inc., New York, 1995)

    Google Scholar 

  20. M. P. Mack, G. D. Via, A. C. Abare, M. Hansen, P. Kozodoy, S. Keller, J. S. Speck, U. K. Mishra, L. A. Coldren, and S. P. DenBaars, Electron. Lett. 34, 1315 (1998)

    Article  CAS  Google Scholar 

  21. For a review on physical properties of threading dislocations in GaN please see J.S. Speck and S. J. Rosner, to be published in Physica B (1999).

    Google Scholar 

  22. M. Hansen, P. Fini, A. C. Abare, L. A. Coldren, J. S. Speck, and S. P. DenBaars, presented at the 1999 Electronic Materials Conference, Santa Barbara, CA, 1999 (unpublished).

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Materials Department and Electrical and Computer Engineering Department, College of Engineering, University of California, Santa Barbara, California, 93106, USA

    Monica Hansen, Paul Fini, Lijie Zhao, Amber Abare, Larry A. Coldren, James S. Speck & Steven P. DenBaars

Authors
  1. Monica Hansen
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Paul Fini
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Lijie Zhao
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. Amber Abare
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. Larry A. Coldren
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. James S. Speck
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. Steven P. DenBaars
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Hansen, M., Fini, P., Zhao, L. et al. Improved Characteristics of InGaN Multi-Quantum-Well Laser Diodes Grown on Laterally Epitaxially Overgrown GaN on Sapphire. MRS Online Proceedings Library 595, 13 (1999). https://doi.org/10.1557/PROC-595-F99W1.3

Download citation

  • Published:

  • DOI: https://doi.org/10.1557/PROC-595-F99W1.3

Search

Navigation