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Remote Plasma Enhanced-Metal Organic Chemical Vapor Deposition of Zirconium Oxide/Silicon Oxide Alloy, (ZrO2)1−(SiO2)1−x (x:≤0.5), Thin Films for Advanced High-K Gate Dielectrics

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Abstract

A remote plasma enhanced-metal organic chemical vapor deposition (RPE-MOCVD) process was developed for the preparation of non-crystalline (ZrO2)x-(SiO2)1−x (x ≤ 0.5) alloys, targeting the compound composition ZrSiO4with k ∼ 12.5. Shifts in Si LVV and Zr LMM AES energies with respect to elemental values showed that the deposited film was a fully-oxidized zirconium/silicon alloy. FTIR results were consistent with AES, and a Zr-O-Si bonding mode was identified in the spectra. The films were amorphous before and after RTA at 900°C for 30 sec, as monitored via RHEED. Optical absorption measurements indicated the onset of band-to-band transitions at an energy of approximately 6 eV. Finally, C-V testing showed that the films were insulating.

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Authors and Affiliations

  1. Departments of Materials Science and Engineering, Physics, and Electrical and Computer Engineering, North Carolina State University, Raleigh, NC, 27695-8202, USA

    K. Flock, R. Therrien, R. Johnson, B. Rayner, L. Günther, N. Brown, B. Claflin & G. Lucovsky

  2. Intel Corp., Hillsborough, OR, 97124, USA

    D. Wolfe

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  1. D. Wolfe
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  2. K. Flock
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  3. R. Therrien
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  4. R. Johnson
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  5. B. Rayner
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  6. L. Günther
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  7. N. Brown
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  8. B. Claflin
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  9. G. Lucovsky
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Wolfe, D., Flock, K., Therrien, R. et al. Remote Plasma Enhanced-Metal Organic Chemical Vapor Deposition of Zirconium Oxide/Silicon Oxide Alloy, (ZrO2)1−(SiO2)1−x (x:≤0.5), Thin Films for Advanced High-K Gate Dielectrics. MRS Online Proceedings Library 567, 343–348 (1999). https://doi.org/10.1557/PROC-567-343

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  • DOI: https://doi.org/10.1557/PROC-567-343

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