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Novel Applications of Rapid Thermal Chemical Vapor Deposition for Nanoscale MOSFET’s

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Abstract

In this paper we examine several applications of Rapid Thermal Chemical Vapor Deposition (RTCVD) for the fabrication of sub-100 rum MOSFET’s. Vertical dual-gated MOSFET’s are used as a test vehicle to implement FET’s of very short channel length. To realize such devices, the ability of epitaxial Si1-x-y, GexCy layers for suppressing the thermal diffusion, transient enhanced diffusion, and oxidation enhanced diffusion of boron both in the Si1-x-y, GexCy and in nearby Si layers is very useful Novel gate electrodes deposited by RTCVD also showed the ability to greatly reduce boron penetration in ptype polycrystalline gates for p-channel FET’s.

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Authors and Affiliations

  1. Center for Photonics and Optoelectronic Materials, Department of Electrical Engineering, Princeton University, Princeton, NJ, 08544, USA

    J. C. Sturm, M. Yang, C. L. Chang & M. S. Carroll

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  1. J. C. Sturm
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  2. M. Yang
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  3. C. L. Chang
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  4. M. S. Carroll
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Sturm, J.C., Yang, M., Chang, C.L. et al. Novel Applications of Rapid Thermal Chemical Vapor Deposition for Nanoscale MOSFET’s. MRS Online Proceedings Library 525, 273–281 (1998). https://doi.org/10.1557/PROC-525-273

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  • DOI: https://doi.org/10.1557/PROC-525-273

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